smd type ic 1 mosfet smd type 2.3 0.60 +0.1 -0.1 6.50 +0.15 -0.15 1.50 +0.15 -0.15 0.80 +0.1 -0.1 4.60 +0.15 -0.15 0.50 +0.15 -0.15 9.70 +0.2 -0.2 5.30 +0.2 -0.2 2.30 +0.1 -0.1 0.50 +0.8 -0.7 5.55 +0.15 -0.15 2.65 +0.25 -0.1 1.50 +0.28 -0.1 0.127 max 3 .8 0 to-252 unit: mm 1gate 2drain 3source 2SK3794 features low on-state resistance r ds(on)1 =44mmax.(v gs =10v,i d =10a) r ds(on)2 =78mmax.(v gs =4.0v,i d =10a) low c iss :c iss =760pftyp. built-in gate protection diode absolute maximum ratings ta = 25 parameter symbol rating unit drain to source voltage v dss 60 v gate to source voltage v gss 20 v i d 20 a i dp * 50 a power dissipation t a =25 1.5 t c =25 30 channel temperature t ch 150 storage temperature t stg -55to+150 *pw 10 s,duty cycle 1% drain current p d w electrical characteristics ta = 25 parameter symbol testconditons min typ max unit drain cut-off current i dss v ds =60v,v gs =0 10 a gate leakage current i gss v gs = 20v,v ds =0 10 a gate cut off voltage v gs(off) v ds =10v,i d =1ma 2.5 3.5 4.5 v forward transfer admittance y fs v ds =10v,i d =10a 7.0 15 s r ds(on)1 v gs =10v,i d =10a 35 44 m r ds(on)2 v gs =4.0v,i d =10a 54 78 m input capacitance c iss 760 pf output capacitance c oss 150 pf reverse transfer capacitance c rss 71 pf turn-on delay time t on 13 ns rise time t r 170 ns turn-off delay time t off 43 ns fall time tf 34 ns total gate charge q g 17 nc gate to source charge q gs 3.0 nc gate to drain charge q gd 4.7 nc v dd = 48v v gs =10v i d =10a v ds =10v,v gs =0,f=1mhz i d =10a,v gs(on) =10v,r g =0 ,v dd =30v drain to source on-state resistance product specification 4008-318-123 sales@twtysemi.com 1 of 1 http://www.twtysemi.com
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